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August 16, 2017: EXALOS AG issued new European patent [EP3206237 (A1)]

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EXALOS AG has been issued a new European patent titled "LIGHT EMITTING DEVICE WITH TRANSPARENT CONDUCTIVE GROUP-III NITRIDE LAYER" by the European Patent Office.

ABSTRACT

The device can be a light emitting device such as an LED or a laser and 5comprises - a semiconductor structure operable to emit light and comprising a first layer and a second layer; and in addition, - a transparent layer of a nitride of one or more group-III elements, which is transparent to light emitted from the semiconductor structure. The transparent layer is present on the first layer and has an electrical conductivity exceeding an electrical conductivity of the first layer. The semiconductor structure can be epitaxial with the transparent layer. A current aperture can be provided which is epitaxial with both, the transparent layer and the first layer. The first layer can be an Mg-doped nitride of one or more group-III elements.

Appl. No.EP20170020048

Source: European Patent Office

INDEX

SECTION 1 EXALOS AG PROFILE

SECTION 2 EXALOS AG PATENTS

SECTION 1 EXALOS AG PROFILE

1.1 SUMMARY

PermID: 4296201948

Website: http://www.exalos.com

SECTION 2 EXALOS AG PATENTS

PREVIOUS PATENT STORY:

October 18, 2016 EXALOS AG issued new U.S. patent [9,472,922]

ABSTRACT

An external cavity semiconductor laser light source comprises includes a semiconductor gain device operable to provide light amplification; a wavelength selection element including a diffraction grating; and light re-directors. The gain device, light re-directors and grating are arranged so that an optical resonator is established for light portions emitted by the gain device and diffracted by the diffraction grating. The resonator is an external cavity laser resonator. The light source is capable of varying an angle of incidence of radiation circulating in the resonator onto wavelength selection element to select a resonator radiation wavelength dependent on the angle of incidence.

PermID: 4296201948

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